Title :
Backside optical emission diagnostics for excess IDDQ
Author :
Kash, J.A. ; Tsang, J.C. ; Rizzolo, Richard F. ; Patel, Atul K. ; Shore, Aaron D.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1998 12:00:00 AM
Abstract :
Backside optical emission was used to diagnose excess quiescent current in a multimillion gate microprocessor. Emission images showed the current was due to FETs improperly set in a conducting state. The utility of backside optical emission for IC diagnostics is discussed, and requirements for optical detectors and sample preparation are considered
Keywords :
failure analysis; fault diagnosis; fault location; infrared imaging; integrated circuit reliability; integrated circuit testing; luminescence; microprocessor chips; FET conducting state; IC diagnostics; backside optical emission diagnostics; emission images; excess IDDQ; excess quiescent current; multimillion gate microprocessor; optical detectors; sample preparation; CMOS logic circuits; Circuit faults; Circuit testing; Latches; Logic arrays; Logic testing; Microprocessors; Optical imaging; Stimulated emission; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
