Title :
Technology for advanced high-performance microprocessors
Author :
Bohr, Mark T. ; El-Mansy, Youssef A.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
fDate :
3/1/1998 12:00:00 AM
Abstract :
This paper describes the development of logic technologies that meet the density, performance, power, and manufacturing requirements for advanced high-performance microprocessors. Aggressive scaling of MOS transistor dimensions along with reduced power supply provide devices with high performance, low power, and good reliability. Multiple layers of planarized aluminum interconnect with high aspect ratios are used to address the increasing importance of interconnect density and performance. Static RAM test vehicles with small 6-transistor cell sizes are used to develop these logic technologies and to provide early demonstrations of yield and performance capabilities. The manufacturing strategy includes development group ownership of the technology from inception to early manufacturing ramp, extensive reuse of prior generation process equipment and modules, and a “copy exactly” methodology to ensure successful process startup and ramp in multiple facilities
Keywords :
SRAM chips; integrated circuit interconnections; integrated circuit technology; microprocessor chips; MOS transistor scaling; copy exactly methodology; development group ownership; equipment reuse; high-performance microprocessor; logic technology; low power circuit; manufacturing; multiple facility; planarized aluminum interconnect; process startup; ramp; reliability; static RAM; Costs; Delay; Integrated circuit interconnections; Isolation technology; Logic; MOSFETs; Manufacturing; Microprocessors; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on