A new device design methodology for manufacturability

Author

Lu, Jye-Chyi ; Holton, William C. ; Fenner, Joel S. ; Williams, Stewart C. ; Kim, Ki Wook ; Hartford, Alan H. ; Chen, Di ; Roze, Ksenia ; Littlejohn, Michael A.

Author_Institution

Dept. of Stat., North Carolina State Univ., Raleigh, NC, USA

Volume

45

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

634

Lastpage

642

Abstract

As future technology generations for integrated circuits continue to “shrink”, TCAD tools must be made more central to manufacturing issues; thus, yield optimization and design for manufacturing (DFM) should be addressed integrally with performance and reliability when using TCAD during the initial product design. This paper defines the goals for DFM in TCAD simulations and outlines a formal procedure for achieving an optimized result (ODFM). New design of experiments (DOE), weighted least squares modeling and multiple-objective mean-variance optimization methods are developed as significant parts of the new ODFM procedure. Examples of designing a 0.18-μm MOSFET device are given to show the impact of device design procedures on device performance distributions and sensitivity variance profiles

Keywords

CAD; MOSFET; design for manufacture; design of experiments; least squares approximations; optimisation; 0.18 micron; MOSFET device; ODFM; TCAD simulation; design of experiments; integrated circuit yield; multiple-objective mean-variance optimization; optimized design for manufacturing; performance distribution; product design; reliability; sensitivity variance profile; weighted least squares model; Circuit simulation; Design for manufacture; Design methodology; Design optimization; Integrated circuit manufacture; Integrated circuit reliability; Integrated circuit technology; Integrated circuit yield; Manufacturing; Product design;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.661225

Filename

661225