DocumentCode
1341235
Title
Fault Modeling and Worst-Case Test Vectors for Delay Failures Induced by Total Dose in ASICs
Author
Abou-Auf, Ahmed A. ; Abdel-Aziz, Mostafa M. ; Abdel-Aziz, Hamzah A. ; Wassal, Amr G. ; Talkhan, Ihab E.
Author_Institution
Dept. of Electron. Eng., American Univ. in Cairo, Cairo, Egypt
Volume
59
Issue
6
fYear
2012
Firstpage
2930
Lastpage
2935
Abstract
We analyzed the delay failure induced in standard-cell ASICs by total-ionizing dose. We developed a novel cell-level fault model for delay failures. We used this fault model to identify worst-case test vectors (WCTV) for delay failures induced in ASIC devices exposed to total ionizing dose. The fault model was experimentally validated using SPICE simulation and total dose data. We introduced a fast search algorithm based on directed graph and genetic algorithms to help identify WCTV for large ASICs within reasonable search time. The methodology was validated using ASIC test chip and Cobalt 60 facility.
Keywords
CMOS integrated circuits; SPICE; application specific integrated circuits; directed graphs; dosimetry; embedded systems; failure analysis; fault simulation; genetic algorithms; integrated circuit testing; ASIC test chip; Cobalt 60 facility; SPICE simulation; WCTV; cell-level fault model; delay failure; delay failures; directed graph; genetic algorithms; search time; standard-cell ASIC; total dose data; total ionizing dose; total-ionizing dose; worst-case test vectors; Algorithm design and analysis; Application specific integrated circuits; CMOS technology; Failure analysis; Genetic algorithms; CMOS; delay failure; test vectors; total dose;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2224376
Filename
6365384
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