DocumentCode
1341246
Title
Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach
Author
Paulsen, Ronald E. ; Kyono, Carl S. ; Wang, Yannan ; Klein, M. ; Lim, I.-S. ; Tinkler, S. ; Bellamak, B. ; Odle, David W. ; Zhou, Zhixu ; Dahl, P. ; Giovanetto, Mark ; Makwana, Jitendra ; Patel, S. ; Reno, Chris ; Lenahan, Patrick M. ; Billman, Curt A.
Author_Institution
Motorola Inc., East Kilbride, UK
Volume
45
Issue
3
fYear
1998
fDate
3/1/1998 12:00:00 AM
Firstpage
655
Lastpage
664
Abstract
Process integration is approached from a built-in reliability perspective in order to develop a pre-metal inter-level dielectric (ILDO) module which may be integrated into a submicron CMOS process with embedded nonvolatile memory. The approach involves developing a fundamental understanding of the process parameters that modulate parasitics and impact reliability. The benefit of such an approach is a relatively simple process integration while achieving a highly manufacturable and reliable process. Several ILDO films have been characterized to understand the physical and chemical composition, process parameter dependencies, and gettering properties in order to define a process window from which to integrate the most manufacturable process
Keywords
CMOS memory circuits; EPROM; dielectric thin films; getters; integrated circuit metallisation; integrated circuit reliability; ILDO film; built-in reliability; chemical composition; embedded nonvolatile memory; gettering; parasitics; pre-metal interlevel dielectric module; process integration; submicron CMOS manufacturing; CMOS integrated circuits; CMOS process; Chemical processes; Dielectrics; EPROM; Fabrication; Gettering; Manufacturing processes; Nonvolatile memory; Planarization;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.661227
Filename
661227
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