Title :
Photopumped antiguide blue lasers fabricated from molecular beam epitaxial ZnSe on GaAs
Author :
Guan, Y. ; Zmudzinski, C.A. ; Zory, P.S. ; Park, R.M.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
Room temperature photopumped laser oscillation at 469 nm has been achieved in ZnSe thin film leaky waveguide (antiguide) resonators with threshold pump intensities of about 350 kW/cm/sup 2/. The 1 mu m thick ZnSe was grown by molecular beam epitaxy on a
Keywords :
II-VI semiconductors; laser transitions; molecular beam epitaxial growth; optical pumping; semiconductor growth; solid lasers; zinc compounds; 469 nm; GaAs; II-VI semiconductor; MBE; TE/sub 0/ optical mode loss; differential quantum efficiency; molecular beam epitaxial ZnSe; photopumped antiguide blue lasers; pump wavelength; room temperature photopumped laser oscillation; short-wavelength edge light emitting diodes; thin film leaky waveguide resonators; threshold pump intensities; Gallium arsenide; Laser excitation; Laser modes; Molecular beam epitaxial growth; Optical pumping; Optical resonators; Optical waveguides; Pump lasers; Waveguide lasers; Zinc compounds;
Journal_Title :
Photonics Technology Letters, IEEE
