DocumentCode
1341271
Title
Single Event Effects in Power MOSFETs Due to the Secondary Neutron Environment in a Proton Therapy Center
Author
Cascio, Ethan W. ; Riley, Kent J. ; McCormack, Joe ; Flanagan, Rob
Author_Institution
Francis H. Burr Proton Therapy Center, Massachusetts Gen. Hosp., Boston, MA, USA
Volume
59
Issue
6
fYear
2012
Firstpage
3154
Lastpage
3159
Abstract
Secondary neutron induced single event burnouts (SEB) in power MOSFETs to be installed in an X-ray generator located in a proton therapy treatment vault are characterized. This is done using both accelerated and in situ testing. Experimental techniques and schematics are presented that allow non-destructive testing of multiple MOSFETs in parallel for in situ real time measurements.
Keywords
neutron effects; power MOSFET; radiation therapy; SEB; X-ray generator; experimental schematics; experimental techniques; in situ real time measurements; multiple MOSFET; nondestructive testing; power MOSFET; proton therapy center; proton therapy treatment vault; secondary neutron environment; secondary neutron induced single event burnouts; single event effects; Nondestructive testing; Power MOSFET; Protons; Radiation effects; Neutron radiation effects; power MOSFETs; protons; single event burnout;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2221741
Filename
6365390
Link To Document