Title :
Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear damping
Author :
Fukushima, Tom ; Nagarajan, Radhakrishnan ; Bowers, John E. ; Logan, Ralph A. ; Tanbun-Ek, Tawee
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Berkeley, CA, USA
Abstract :
The authors demonstrate theoretically and experimentally that the relative intensity noise (RIN) of laser diodes can be dramatically reduced by decreasing nonlinear damping in the laser. Four types of InGaAs/InP multiple quantum well (MQW) lasers with different well widths, barrier widths, and numbers of wells were fabricated. By comparing these four types of devices, it is shown that MQW lasers with wider wells, narrower barriers, and larger numbers of wells have smaller nonlinear damping and lower RIN.<>
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductor; InGaAs-InP; InGaAs/InP multiple quantum well lasers; barrier widths; laser diodes; low nonlinear damping; numbers of wells; relative intensity noise; well widths; Acoustical engineering; Damping; Diode lasers; Indium gallium arsenide; Indium phosphide; Laser noise; Laser theory; Noise reduction; Quantum well devices; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
