Title :
0.15-μm buried-channel p-MOSFETs with ultrathin boron-doped epitaxial Si layer
Author :
Ohguro, Tatsuya ; Yamada, Keisaku ; Sugiyama, Naoharu ; Imai, Seiji ; Usuda, Kouji ; Yoshitomi, Takashi ; Fiegna, Claudio ; Ono, Mizuki ; Saito, Masanobu ; Momose, Hisayo Sasaki ; Katsumata, Yasuhiro ; Iwai, Hiroshi
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan
fDate :
3/1/1998 12:00:00 AM
Abstract :
We demonstrated silicon MOSFETs with a counter-doped ultrathin epitaxial channel grown by low-temperature UHV-CVD; this allows the channel region to be doped with boron with high precision. The boron concentration and epitaxial layer thickness can be chosen independently, and so it is easy to adjust the threshold voltage of the buried-channel p-MOSFETs with n-type polysilicon gates. It was confirmed that choosing an ultrathin epitaxial layer at 10 nm leads to suppression of the short-channel effects in buried-channel p-MOSFETs with gate length down to 0.15 μm, while maintaining an appropriate value of threshold voltage
Keywords :
MOSFET; boron; buried layers; doping profiles; hot carriers; semiconductor device reliability; semiconductor epitaxial layers; silicon; 0.15 micron; 10 nm; B concentration; Si:B; buried-channel p-MOSFET; counter-doped ultrathin epitaxial channel; epitaxial layer thickness; hot carrier reliability; low-temperature UHV-CVD; n-type polysilicon gates; short-channel effects supression; threshold voltage; ultrathin B-doped epitaxial Si layer; Boron; Costs; Epitaxial growth; Epitaxial layers; Fabrication; Ion implantation; Laboratories; MOSFET circuits; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
