Simulation of the refractive index properties of a tunable-electron-density quantum well and reservoir structure

Author

Wang, Jin ; Leburton, J.P. ; Sengers, A.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

3

Issue

8

fYear

1991

Firstpage

709

Lastpage

711

Abstract

A numerical simulation of the optical properties of a novel In/sub x/Ga/sub 1-x/As/In/sub 1-y/Al/sub y/As multiple quantum well heterostructure with tunable charge density is presented. The influence of carriers and dopant ion charges on the electronic properties is simulated by a self-consistent Poisson-Schrodinger solver. The calculated optical constants of the quantum well reproduce well the experimental data. It appears that this model can easily be implemented to include current injection and used as a design tool to optimize the performance of optical modulator quantum well devices.<>

Keywords

III-V semiconductors; aluminium compounds; carrier density; electro-optical devices; gallium arsenide; indium compounds; optical modulation; refractive index; semiconductor quantum wells; III-V semiconductor; In/sub x/Ga/sub 1-x/As-In/sub 1-y/Al/sub y/As; In/sub x/Ga/sub 1-x/As/In/sub 1-y/Al/sub y/As multiple quantum well heterostructure; current injection; dopant ion charges; electronic properties; electrooptic modulator; numerical simulation; optical constants; optical modulator quantum well devices; refractive index properties; reservoir structure; self-consistent Poisson-Schrodinger solver; tunable charge density; tunable-electron-density quantum well; Design optimization; Numerical simulation; Optical design; Optical modulation; Optical refraction; Optical variables control; Particle beam optics; Refractive index; Reservoirs; Semiconductor process modeling;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.84460

Filename

84460