Title :
Mixed signal integrated circuits based on GaAs HEMTs
Author :
Thiede, Andreas ; Zhi-Gong ; Schlechtweg, Michael ; Lang, Manfred ; Leber, Petra ; Lao, Zhihao ; Nowotny, Ulrich ; Hurm, Volker ; Rieger-Motzer, Michaela ; Ludwig, Manfred ; Sedler, Martin ; Köhler, Klaus ; Bronner, Wolfgang ; Hornung, Jochen ; Hülsmann,
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
fDate :
3/1/1998 12:00:00 AM
Abstract :
During the past five years numerous mixed signal integrated circuits (ICs) have been designed, processed, and characterized based on our 0.2 /spl mu/m gate length AlGaAs/GaAs quantum well HEMT technology. Utilizing the inherent advantages of the AlGaAs/GaAs material system, optical, analog, microwave, and digital functions have been integrated monolithically. Examples are a chip set for 40 Gb/s optoelectronic data transmission systems, 15 and 34 GHz PLLs, a 35 GHz phase shifter for phased array antenna applications, a 2-kb ROM with subnanosecond access time for direct digital signal synthesis, and a 6-k gate array.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; antenna phased arrays; field effect MMIC; gallium arsenide; integrated circuit design; integrated optoelectronics; mixed analogue-digital integrated circuits; phase locked loops; semiconductor quantum wells; 0.2 micron; 15 GHz; 34 GHz; 40 Gbit/s; AlGaAs-GaAs; HEMT; IC design; PLL; ROM; direct digital signal synthesis; gate array; mixed signal integrated circuits; optoelectronic data transmission systems; phase shifter; phased array antenna applications; quantum well HEMT technology; subnanosecond access time; Antenna arrays; Gallium arsenide; HEMTs; Integrated circuit technology; MODFETs; Mixed analog digital integrated circuits; Optical materials; Phased arrays; Process design; Signal design;
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
