Radiation Studies of Spin-Transfer Torque Materials and Devices

Author

Hughes, Harold ; Bussmann, Konrad ; McMarr, Patrick J. ; Cheng, Shu-Fan ; Shull, Robert ; Chen, Andrew P. ; Schäfer, Simon ; Mewes, Tim ; Ong, Adrian ; Chen, Eugene ; Mendenhall, Marcus H. ; Reed, Robert A.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

59

Issue

6

fYear

2012

Firstpage

3027

Lastpage

3033

Abstract

Spin-transfer torque film stacks and devices having in-plane magnetization were irradiated using a cobalt-60 gamma source. Samples were also exposed to 2 MeV and 220 MeV protons. Measurements of magnetization vs. field, ferromagnetic resonance, and tunnel magnetoresistance were performed on the film stacks before and after exposure to these sources and no changes were observed in the associated material properties. Spin-transfer torque devices were exposed to the same sources and show no changes in bit-state or write performance.

Keywords

ferromagnetic resonance; gamma-ray effects; magnetoresistance; proton effects; bit-state; cobalt-60 gamma source; ferromagnetic resonance; inplane magnetization; magnetization measurements; material properties; spin-transfer torque film devices; spin-transfer torque film stacks; spin-transfer torque materials; tunnel magnetoresistance; write performance; Magnetic resonance; Magnetic tunneling; Nonvolatile memory; Tunneling magnetoresistance; Magnetic tunnel junction; nonvolatile memory; spin-transfer torque;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2223487

Filename

6365402