DocumentCode :
1341360
Title :
A New Type of Ferroelectric Shift Register
Author :
Anderson, John R.
Author_Institution :
The National Cash Register Co., Dayton, Ohio.
Issue :
4
fYear :
1956
Firstpage :
184
Lastpage :
191
Abstract :
Ferroelectric shift registers having completely independent parallel or serial inputs and outputs have been designed and constructed. The principal components of these shift registers are single crystals of barium titanate and silicon junction diodes. Two ferroelectric units and two to three silicon junction diodes are required for each stage of the shift register. Practical operating speeds for 10-stage shift registers with transistor drives are at present from 0 to 5 kc. The small size of the ferroelectric units and the low power consumption in this speed range make the ferroelectric shift register attractive for many digital circuit applications.
Keywords :
Barium; Buffer storage; Crystals; Diodes; Ferroelectric materials; Hysteresis; Shift registers; Silicon; Titanium compounds; Voltage;
fLanguage :
English
Journal_Title :
Electronic Computers, IRE Transactions on
Publisher :
ieee
ISSN :
0367-9950
Type :
jour
DOI :
10.1109/TEC.1956.5219949
Filename :
5219949
Link To Document :
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