Title :
New Fowler-Nordheim Injection, Charge Neutralization, and Gamma Tests on the REM RFT300 RADFET Dosimeter
Author :
Lipovetzky, J. ; Siedle, A. Holmes ; Inza, M. García ; Carbonetto, S. ; Redin, E. ; Faigon, A.
Author_Institution :
Device Phys.-Microelectron. Lab., Univ. de Buenos Aires, Buenos Aires, Argentina
Abstract :
Through the injection of a Fowler-Nordheim tunnel current or the inversion of oxide fields during irradiation (Radiation-Induced Charge Neutralization), the oxide charge trapped in thick-oxide (300 nm) commercial RADFETs, often called QOT could be erased. Novel trapped-hole and interface characteristics were observed after treatments of this type at high doses. With both erasure techniques, it was possible only to neutralize a fraction of the oxide trapped charge. A non negligible amount of charge and border traps is deemed here to be “intractable”. That adjective an a symbol, QIN, are introduced for the first time in this paper. Later sections discuss the possible impact of these results. The conclusion for dosimetry is that a “reusable RADFET” dosimeter, working up to an unprecedented dose before wearing out, may be a practical possibility.
Keywords :
MOSFET; dosimeters; gamma-ray detection; Fowler-Nordheim injection; Fowler-Nordheim tunnel current; REM RFT300 RADFET dosimeter; charge neutralization; erasure techniques; gamma tests; interface characteristics; novel trapped-hole; oxide field inversion; oxide trapped charge; reusable RADFET dosimeter; size 300 nm; thick-oxide commercial RADFET; Dosimetry; MOS devices; Radiation effects; Bias-controlled cycled measurements; Fowler-Nordheim tunnel injection; MOS devices; RADFET; REM RFT300; dosimeters; radiation effects; solid- state detectors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2222667