Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides

A model for radiation-induced interface-trap buildup distinguishes among the contributions of hydrogen dimerization, electron recombination, and electric field mechanisms, quantitatively explaining time-dependent and true dose rate effects in irradiated bipolar isolation oxides. Hydrogen dimerization is the dominant ELDRS mechanism for devices exposed to medium H₂ concentrations (1% per volume), whereas H₂ cracking dominates as H₂ concentration is increased further. Electron recombination mechanisms contribute at high dose rates ( >; 100 rad(SiO₂)/s), but are not the dominant ELDRS mechanism at dose rates lower than 100 rad(SiO₂)/s).