• DocumentCode
    1341466
  • Title

    Single Event Rates for Devices Sensitive to Particle Energy

  • Author

    Edmonds, Larry D. ; Scheick, Leif Z. ; Banker, Mackenzie W.

  • Volume
    59
  • Issue
    6
  • fYear
    2012
  • Firstpage
    2936
  • Lastpage
    2944
  • Abstract
    Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a “stopping rate per unit volume” even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.
  • Keywords
    power MOSFET; radiation effects; SEGR rate; conservative rate; device region; heavy-ion environments; linear energy transfer; low-energy particles; particle energy; power MOSFET; single event rates; single-event effect; stopping rate tables; Cosmic rays; Energy exchange; MOSFETs; Space technology; Upper bound; single event gate rupture (SEGR); single event rate; stopping rate;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2223826
  • Filename
    6365418