DocumentCode :
1341466
Title :
Single Event Rates for Devices Sensitive to Particle Energy
Author :
Edmonds, Larry D. ; Scheick, Leif Z. ; Banker, Mackenzie W.
Volume :
59
Issue :
6
fYear :
2012
Firstpage :
2936
Lastpage :
2944
Abstract :
Single event rates (SER) can include contributions from low-energy particles such that the linear energy transfer (LET) is not constant. Previous work found that the environmental description that is most relevant to the low-energy contribution to the rate is a “stopping rate per unit volume” even when the physical mechanisms for a single-event effect do not require an ion to stop in some device region. Stopping rate tables are presented for four heavy-ion environments that are commonly used to assess device suitability for space applications. A conservative rate estimate utilizing limited test data is derived, and the example of SEGR rate in a power MOSFET is presented.
Keywords :
power MOSFET; radiation effects; SEGR rate; conservative rate; device region; heavy-ion environments; linear energy transfer; low-energy particles; particle energy; power MOSFET; single event rates; single-event effect; stopping rate tables; Cosmic rays; Energy exchange; MOSFETs; Space technology; Upper bound; single event gate rupture (SEGR); single event rate; stopping rate;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2223826
Filename :
6365418
Link To Document :
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