Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs

Author

Jungsik Nam ; Chang Yong Kang ; Kwang Pyo Kim ; Hyeopgoo Yeo ; Boung Jun Lee ; Sungkyu Seo ; Ji-Woon Yang

Author_Institution

Dept. of Electron. & Inf. Eng., Korea Univ., Sejong, South Korea

Volume

59

Issue

6

fYear

2012

Firstpage

3021

Lastpage

3026

Abstract

Effects of γ-ray irradiation on short-channel effects (SCEs) in low-doped double-gate MOSFETs are experimentally examined for various fin widths and channel lengths. The different behavior of the effects in NMOS and PMOS devices are analyzed using three-dimensional (3-D) TCAD simulation. The physical interpretation for the influence of ionizing radiation on SCEs in low-doped multi-gate MOSFETs is provided. This successfully explains not only the degradation in NMOS, but also the improvement in PMOS for subthreshold characteristics by irradiation.

Keywords

MOS integrated circuits; MOSFET; technology CAD (electronics); NMOS device; PMOS device; SCE; gamma-ray irradiation; ionizing radiation; low-doped double-gate MOSFET; low-doped multigate MOSFET; short-channel effects; subthreshold characteristics; three-dimensional TCAD simulation; Ionizing radiation; MOSFETs; Radiation effects; Simulation; Double-gate MOSFETs; ionizing radiation; multi-gate MOSFETs; short-channel effects; total-ionizing dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2226751

Filename

6365421