Title :
Influence of Ionizing Radiation on Short-Channel Effects in Low-Doped Multi-Gate MOSFETs
Author :
Jungsik Nam ; Chang Yong Kang ; Kwang Pyo Kim ; Hyeopgoo Yeo ; Boung Jun Lee ; Sungkyu Seo ; Ji-Woon Yang
Author_Institution :
Dept. of Electron. & Inf. Eng., Korea Univ., Sejong, South Korea
Abstract :
Effects of γ-ray irradiation on short-channel effects (SCEs) in low-doped double-gate MOSFETs are experimentally examined for various fin widths and channel lengths. The different behavior of the effects in NMOS and PMOS devices are analyzed using three-dimensional (3-D) TCAD simulation. The physical interpretation for the influence of ionizing radiation on SCEs in low-doped multi-gate MOSFETs is provided. This successfully explains not only the degradation in NMOS, but also the improvement in PMOS for subthreshold characteristics by irradiation.
Keywords :
MOS integrated circuits; MOSFET; technology CAD (electronics); NMOS device; PMOS device; SCE; gamma-ray irradiation; ionizing radiation; low-doped double-gate MOSFET; low-doped multigate MOSFET; short-channel effects; subthreshold characteristics; three-dimensional TCAD simulation; Ionizing radiation; MOSFETs; Radiation effects; Simulation; Double-gate MOSFETs; ionizing radiation; multi-gate MOSFETs; short-channel effects; total-ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2226751
