Title :
Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices
Author :
Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Song, Emil B. ; Kim, Sung Min ; Galatsis, Kosmas ; Wang, Kang L Wang
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based non-volatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semiconductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.
Keywords :
MIS devices; annealing; dosimetry; flash memories; graphene; interface states; X-ray irradiation; annealing response; border traps; constant-voltage stress; electrical stress; electron volt energy 1.8 MeV; electron volt energy 10 keV; graphene-based nonvolatile memory devices; hysteretic charge exchange; interface traps; ionizing radiation exposure; memory retention; memory window; metal-nitride-oxide-semiconductor memory devices; total ionizing dose effect; Charge carrier mobility; FETs; Graphene; Integrated circuit technology; Lead compounds; Nonvolatile memory; Graphene FET; sol-gel PZT; total ionizing dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2224135
