Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices

Author

Zhang, Cher Xuan ; Zhang, En Xia ; Fleetwood, Daniel M. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Song, Emil B. ; Kim, Sung Min ; Galatsis, Kosmas ; Wang, Kang L Wang

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

Volume

59

Issue

6

fYear

2012

Firstpage

2974

Lastpage

2978

Abstract

Electrical stress and 10-keV x-ray and 1.8-MeV proton irradiation and annealing responses are evaluated for graphene-based non-volatile memory devices. The memory characteristics of these structures derive primarily from hysteretic charge exchange between the graphene and interface and border traps, similar to the operation of metal-nitride-oxide-semiconductor memory devices. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant reduction in memory window.

Keywords

MIS devices; annealing; dosimetry; flash memories; graphene; interface states; X-ray irradiation; annealing response; border traps; constant-voltage stress; electrical stress; electron volt energy 1.8 MeV; electron volt energy 10 keV; graphene-based nonvolatile memory devices; hysteretic charge exchange; interface traps; ionizing radiation exposure; memory retention; memory window; metal-nitride-oxide-semiconductor memory devices; total ionizing dose effect; Charge carrier mobility; FETs; Graphene; Integrated circuit technology; Lead compounds; Nonvolatile memory; Graphene FET; sol-gel PZT; total ionizing dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2224135

Filename

6365424