DocumentCode :
1341596
Title :
Reduction of gaseous contamination by UV/photoelectron method
Author :
Tobimatsu, Hiroshi ; Inoue, Yuuki ; Seto, Takafumi ; Okuyama, Kikuo ; Fujii, Toshiaki ; Shibahara, Kentaro ; Yokoyama, Shin ; Hirose, Masataka
Author_Institution :
Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan
Volume :
11
Issue :
1
fYear :
1998
fDate :
2/1/1998 12:00:00 AM
Firstpage :
9
Lastpage :
12
Abstract :
We have previously reported that UV/photoelectron method, in which particles are charged by photoelectrons emitted from the UV irradiated metal surface and collected on the electrodes by the electric field, is effective to collect particles in the gas phase. This paper represents that the UV/photoelectron method is effective not only to collect particles but also to reduce the gaseous contamination such as hydrocarbon or organic compounds and water molecules. By using the UV/photoelectron method the carbon atom concentration on the Si surface is reduced to 1/4 compared with that stored in the clean room for the storage period of about 40 h. The oxygen concentration is reduced to 1/7 in the same condition
Keywords :
clean rooms; electrostatic devices; integrated circuit manufacture; photoemission; 40 h; Si; UV/photoelectron method; clean room; gaseous contamination; semiconductor manufacturing; storage period; Electrodes; Filters; Gold; Hydrocarbons; Hydrogen; Organic compounds; Surface cleaning; Surface contamination; Temperature; Water pollution;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.661278
Filename :
661278
Link To Document :
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