Reduction of gaseous contamination by UV/photoelectron method

Author

Tobimatsu, Hiroshi ; Inoue, Yuuki ; Seto, Takafumi ; Okuyama, Kikuo ; Fujii, Toshiaki ; Shibahara, Kentaro ; Yokoyama, Shin ; Hirose, Masataka

Author_Institution

Res. Center for Nanodevices & Syst., Hiroshima Univ., Japan

Volume

11

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

9

Lastpage

12

Abstract

We have previously reported that UV/photoelectron method, in which particles are charged by photoelectrons emitted from the UV irradiated metal surface and collected on the electrodes by the electric field, is effective to collect particles in the gas phase. This paper represents that the UV/photoelectron method is effective not only to collect particles but also to reduce the gaseous contamination such as hydrocarbon or organic compounds and water molecules. By using the UV/photoelectron method the carbon atom concentration on the Si surface is reduced to 1/4 compared with that stored in the clean room for the storage period of about 40 h. The oxygen concentration is reduced to 1/7 in the same condition

Keywords

clean rooms; electrostatic devices; integrated circuit manufacture; photoemission; 40 h; Si; UV/photoelectron method; clean room; gaseous contamination; semiconductor manufacturing; storage period; Electrodes; Filters; Gold; Hydrocarbons; Hydrogen; Organic compounds; Surface cleaning; Surface contamination; Temperature; Water pollution;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.661278

Filename

661278