Temperature-dependent emissivity of silicon-related materials and structures

Author

Ravindra, Nuggehalli M. ; Abedrabbo, Sufian ; Chen, Wei ; Tong, Feiming M. ; Nanda, Arun K. ; Speranza, Anthony C.

Author_Institution

Dept. of Phys., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

11

Issue

1

fYear

1998

fDate

2/1/1998 12:00:00 AM

Firstpage

30

Lastpage

39

Abstract

The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-dependent emissivity of silicon-related materials and structures are presented in this study. These results have been acquired using a spectral emissometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous measurements of surface spectral emittance and temperature by using optical techniques over the near- and mid-IR spectral range and temperatures ranging from 300 K to 2000 K. This noncontact, real-time technique has been used to measure radiative properties as a function of temperature and wavelength for a wide range of silicon-related materials and structures. The first results of the temperature and wavelength dependent emissivity and hence refractive index of silicon nitride, in the literature, is presented in this study

Keywords

Fourier transform spectroscopy; elemental semiconductors; emissivity; high-temperature techniques; infrared spectroscopy; rapid thermal processing; refractive index; silicon; spectral methods of temperature measurement; 300 to 2000 K; Fourier Transform Infra-Red spectrometer; Si; Si₃N₄; noncontact real-time optical technique; radiative properties; refractive index; silicon nitride; silicon-related materials; simultaneous measurement; spectral emissometer; surface spectral emittance; surface temperature; temperature-dependent emissivity; wavelength dependent emissivity; Collaboration; Fourier transforms; Infrared spectra; Optical design; Optical materials; Optical surface waves; Spectroscopy; Surface waves; Temperature distribution; Wavelength measurement;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.661282

Filename

661282