• DocumentCode
    1341660
  • Title

    Noise-driven rate equation analysis of quantum-well, microcavity lasers

  • Author

    LaViolette, Kerry D. ; Liu, Pao-Lo

  • Author_Institution
    Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA
  • Volume
    3
  • Issue
    9
  • fYear
    1991
  • Firstpage
    782
  • Lastpage
    783
  • Abstract
    Noise-driven rate equations are used in modeling microcavity, quantum-well, semiconductor lasers. Results for different cavity designs are compared. Particular attention is paid to threshold and noise characteristics. Using attainable dimensions it is seen that threshold current is reduced, relaxation modulation bandwidth is increased and turn-on delay is shortened as previously predicted for devices with enhanced spontaneous emission. In addition, it is shown that the device tends to lose its coherence as the microcavity design is approached, and the microcavity loses its noise advantage as the bandwidth is increased (when external modulation is considered) because of the lack of roll-off in the 100 GHz spectrum presented.<>
  • Keywords
    electron device noise; laser cavity resonators; laser theory; semiconductor device models; semiconductor junction lasers; cavity designs; coherence; external modulation; modeling; noise characteristics; noise driven rate equations; quantum well microcavity lasers; relaxation modulation bandwidth; semiconductor lasers; threshold; threshold current; turn-on delay; Bandwidth; Delay; Equations; Laser modes; Laser noise; Microcavities; Quantum well lasers; Semiconductor device noise; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.84491
  • Filename
    84491