Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells

Author

Devine, Roderick A B ; Mayberry, Clay ; Kumar, Ankit ; Yang, Yang

Author_Institution

Electron. Foundations Group, AFRL/RVSE, Kirtland AFB, NM, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3109

Lastpage

3113

Abstract

Organic semiconductor photocells based upon P3HT:PCBM (1:1 by weight) have been subjected to X irradiation. The carrier lifetime has been determined using a pulsed optical method with continuous light to generate an open circuit voltage bias. No effect is observed on the carrier lifetime up to 300 krad (SiO₂). However, changes in the open circuit voltage are observed and we argue that these result from compensation of the internal field which results from the built-in potential. The origin of the field modifications must lay in the presence of radiation induced trapped charge near the organic semiconductor/anode and/or cathode interfaces.

Keywords

anodes; carrier lifetime; cathodes; photoelectric cells; radiation effects; SiO₂; X irradiation; built-in potential; carrier lifetime; cathode interface; circuit voltage bias; organic semiconductor photocells; organic semiconductor-anode interface; pulsed optical method; trapped charge; Charge carrier lifetime; Organic semiconductors; Photovoltaic cells; Polymers; Radiation effects; Carrier lifetime; organic semiconductors; photovoltaic cells;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2068577

Filename

5593906