• DocumentCode
    1341670
  • Title

    Well-barrier hole burning in quantum well lasers

  • Author

    Rideout, W. ; Sharfin, W.F. ; Koteles, E.S. ; Vassell, M.O. ; Elman, B.

  • Author_Institution
    GTE Lab. Inc., Waltham, MA, USA
  • Volume
    3
  • Issue
    9
  • fYear
    1991
  • Firstpage
    784
  • Lastpage
    786
  • Abstract
    The reported wide variations in the damping behavior of quantum well lasers are explained by a novel theory of nonlinear gain, well-barrier hole burning. In the model a spatial hole develops perpendicular to the active region involving carriers moving between the wells and the barrier/confinement layers. The modified rate equations describing well-barrier hole burning are presented. An analytical approximation for the nonlinear gain coefficient epsilon , valid only under certain conditions, is given. A numerical solution is given for the case of high photon densities and large capture-times. It is shown how well-barrier hole burning explains the measurements of the increased spontaneous emission from the barrier/confinement region above threshold. Various higher-than-expected damping rates reported in some quantum well lasers are shown to be consistent with the model.<>
  • Keywords
    laser theory; optical hole burning; semiconductor junction lasers; analytical approximation; barrier/confinement layers; damping behavior; high photon densities; increased spontaneous emission; large capture-times; nonlinear gain; nonlinear gain coefficient; quantum well lasers; rate equations; spatial hole; well-barrier hole burning; Bandwidth; Carrier confinement; Damping; Equations; Laser modes; Laser theory; Photonic band gap; Quantum well lasers; Semiconductor lasers; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.84492
  • Filename
    84492