Title :
Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure
Author :
Imafuji, O. ; Yuri, M. ; Hashimoto, T. ; Ishida, M. ; Mannoh, M. ; Yoshikawa, A. ; Itoh, K. ; Kawata, T. ; Ogawa, H.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
fDate :
7/3/1997 12:00:00 AM
Abstract :
High temperature operation at up to 90°C has been achieved in 65O nm-band AlGaInP visible laser diodes with a real refractive index guided self-aligned structure using an AlInP current blocking layer. The operating current is as low as 45 mA under CW operation at 60°C and the characteristic temperature is 120 K from 20 to 60°C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; optical losses; optical waveguides; refractive index; semiconductor lasers; 20 to 90 degC; 45 mA; 650 nm; AlGaInP; CW operation; III-V semiconductors; characteristic temperature; current blocking layer; high temperature operation; operating current; refractive index guided self-aligned structure; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970832
