DocumentCode
1341863
Title
Low operating current and high temperature operation of 650 nm AlGaInP visible laser diodes with real refractive index guided self-aligned structure
Author
Imafuji, O. ; Yuri, M. ; Hashimoto, T. ; Ishida, M. ; Mannoh, M. ; Yoshikawa, A. ; Itoh, K. ; Kawata, T. ; Ogawa, H.
Author_Institution
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Volume
33
Issue
14
fYear
1997
fDate
7/3/1997 12:00:00 AM
Firstpage
1223
Lastpage
1225
Abstract
High temperature operation at up to 90°C has been achieved in 65O nm-band AlGaInP visible laser diodes with a real refractive index guided self-aligned structure using an AlInP current blocking layer. The operating current is as low as 45 mA under CW operation at 60°C and the characteristic temperature is 120 K from 20 to 60°C
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; optical losses; optical waveguides; refractive index; semiconductor lasers; 20 to 90 degC; 45 mA; 650 nm; AlGaInP; CW operation; III-V semiconductors; characteristic temperature; current blocking layer; high temperature operation; operating current; refractive index guided self-aligned structure; visible laser diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970832
Filename
603584
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