• DocumentCode
    1341891
  • Title

    Low-threshold continuous-wave operation of an oxide-confined vertical cavity surface emitting laser based on a quantum dot active region and half-wave cavity

  • Author

    Huffaker, D.L. ; Graham, L.A. ; Deppe, Dennis G.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX
  • Volume
    33
  • Issue
    14
  • fYear
    1997
  • fDate
    7/3/1997 12:00:00 AM
  • Firstpage
    1225
  • Lastpage
    1226
  • Abstract
    Data are presented on vertical cavity surface emitting lasers that use an InGaAlAs quantum dot active region and oxide-confinement. Continuous-wave room temperature operation is achieved at a wavelength of 9510 Å with a threshold current of 235 μA for a 7 μm square oxide aperture. Electroluminescence from similar active regions without a cavity shows that lasing occurs on the three-dimensionally confined quantum dot electronic states
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 235 muA; 7 micron; 9510 A; InGaAlAs; InGaAlAs quantum dot active region; half-wave cavity; low-threshold CW operation; oxide-confined VCSEL; room temperature operation; semiconductor laser; surface emitting laser; vertical cavity SEL;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970825
  • Filename
    603585