• DocumentCode
    1341905
  • Title

    Exploiting the Body of MOS Devices for High Performance Analog Design

  • Author

    Monsurrò, Pietro ; Pennisi, Salvatore ; Scotti, Giuseppe ; Trifiletti, Alessandro

  • Author_Institution
    DIE (Dipt. di Ing. Elettron.), Univ. of Rome Sapienza, Rome, Italy
  • Volume
    11
  • Issue
    4
  • fYear
    2011
  • Firstpage
    8
  • Lastpage
    23
  • Abstract
    With the progressive reduction of MOS transistors minimum dimension and their associated supply voltages, the body terminal-considered in the past as an exclusive source of unwanted second order effects-has been advantageously exploited by digital designers and is also becoming an attractive opportunity for the implementation of high-performance analog integrated circuits. In this paper, we will discuss some techniques that can be applied to many conventional analog building blocks in order to improve their performance (such as gain and linearity) and/or decreasing their supply demand. Experimental prototypes have been implemented and tested, showing that the proposed techniques are promising candidates for enhanced analog IC design in nanoscale technologies.
  • Keywords
    MOSFET; analogue integrated circuits; integrated circuit design; nanoelectronics; MOS devices; MOS transistors; body terminal; enhanced analog IC design; high-performance analog integrated circuit design; minimum dimension reduction; nanoscale technology; second order effects; CMOS integrated circuits; Capacitors; Logic gates; MOS devices; Threshold voltage; Transistors;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    1531-636X
  • Type

    jour

  • DOI
    10.1109/MCAS.2011.942751
  • Filename
    6035851