Title :
An InGaAs/InAlAs superlattice avalanche photodiode with a gain bandwidth product of 90 GHz
Author :
Kagawa, Toshiaki ; Asai, Hiromitsu ; Kawamura, Yuichi
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa, Japan
Abstract :
The authors describe the fabrication of an InGaAs/InAlAs superlattice avalanche photodiode with a gain-bandwidth product of 90 GHz. The device is composed of an InGaAs/InAlAs superlattice multiplication region and an InGaAs photoabsorption layer. The effect of the superlattice multiplication region thickness on the gain-bandwidth product was studied. A gain-bandwidth product of 90 GHz was obtained for the device with a multiplication region thickness of 0.52 mu m. Low noise performance is compatible with the high gain-bandwidth product due to improvement of the ionization rate ratio made by introducing a superlattice structure into the multiplication region.<>
Keywords :
aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor superlattices; 0.52 micron; InGaAs-InAlAs; gain bandwidth product; ionization rate ratio; noise performance; photoabsorption layer; photodetectors; superlattice avalanche photodiode; superlattice multiplication region thickness; Absorption; Avalanche photodiodes; Bandwidth; Indium compounds; Indium gallium arsenide; Ionization; Optical noise; Optical receivers; Photoconductivity; Superlattices;
Journal_Title :
Photonics Technology Letters, IEEE
