Title :
Wet-chemistry surface treatment for dark-current reduction that preserves lateral dimensions of reactive ion etched Ga/sub 0.47/In/sub 0.53/As p-i-n diode photodetectors
Author :
Porkolab, G.A. ; Chen, Y.J. ; Merritt, S.A. ; Tabatabaei, S.A. ; Agarwala, S. ; Johnson, F.G. ; King, O. ; Dagenais, M. ; Wilson, R.A. ; Stone, D.R.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
A wet-chemistry treatment, consisting of a fresh mixture of one-to-one 2-propanol plus concentrated sulfuric acid added to photoresist developer, which is tetramethyl ammonium hydroxide, was found to reduce the dark-current density at the -5-V dc reverse-bias to 2 pA/μm2 (2×10/sup -4/ A/cm2), and simultaneously to maintain the lateral geometrical dimensions, of reactive ion etched, 3 micrometer tall, right-cylinder mesa, Ga/sub 0.47/In/sub 0.53/As p-i-n diode photodetectors with diameters of 100, 50, and 25 μm.
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; photoresists; semiconductor technology; surface treatment; 100 mum; 2-propanol; 25 mum; 50 mum; Ga/sub 0.47/In/sub 0.53/As; Ga/sub 0.47/In/sub 0.53/As p-i-n diode photodetectors; concentrated sulfuric acid; dark-current density; dark-current reduction; dc reverse-bias; lateral dimensions; lateral geometrical dimensions; photoresist developer; reactive ion etched; right-cylinder mesa; tetramethyl ammonium hydroxide; wet-chemistry surface treatment; wet-chemistry treatment; Indium phosphide; Molecular beam epitaxial growth; P-i-n diodes; Photodetectors; Plasma chemistry; Resists; Semiconductor diodes; Sputter etching; Surface treatment; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
