Title :
A balanced distributed preamplifier using MMIC GaAs MESFET technology
Author :
Nguyen, T.L. ; Freundorfer, A.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada
fDate :
4/1/1997 12:00:00 AM
Abstract :
A MMIC balanced preamplifier was fabricated using a 0.8-μm gate length process. A 45-dB/spl Omega/ transimpedance gain, a 6-GHz bandwidth, a 10-pa//spl radic/(Hz)input noise and a 12-dB CMRR were measured.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; circuit noise; electro-optical modulation; frequency shift keying; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical receivers; preamplifiers; /spl mu/m gate length process; 0.8 mum; 6 GHz; GaAs; MMIC GaAs MESFET technology; MMIC balanced preamplifier; balanced distributed preamplifier; transimpedance gain; Bandwidth; Circuit noise; Gallium arsenide; Low-frequency noise; MESFETs; MMICs; Optical noise; Optical receivers; Photodiodes; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
