DocumentCode :
1342256
Title :
High-divider-ratio fast-response capacitive dividers for high-voltage pulse measurements
Author :
Jayaram, Shesha ; Xu, Xiao Yu ; Cross, James D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume :
36
Issue :
3
fYear :
2000
Firstpage :
920
Lastpage :
922
Abstract :
This paper reports the experimental results of the development of a novel capacitive divider for high-voltage pulse measurements. The low-voltage (LV) arm capacitor was prepared by thermally growing silicon oxide on commercially available silicon wafers to form capacitors of very large capacitance per unit area (>10 nF with 2 μm oxide thickness on a 30 mm-diameter wafer). With the proposed design for LV arm capacitance, divider ratios of the order >10000 can easily be obtained
Keywords :
capacitance; capacitors; high-voltage techniques; pulse measurement; voltage dividers; voltage measurement; 2 mum; 30 mm; Si; SiO2; fast-response capacitive dividers; high-divider-ratio; high-voltage pulse measurements; large capacitance per unit area; low-voltage arm capacitor; oxide thickness; silicon wafers; thermally grown silicon oxide; Capacitance; Capacitors; Delay; Optical pulse generation; Power system transients; Pulse measurements; Pulse power systems; Silicon; Voltage; X-ray lasers;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.845072
Filename :
845072
Link To Document :
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