Title :
Heavy-Ion Induced Charge Yield in MOSFETs
Author :
Javanainen, Arto ; Schwank, James R. ; Shaneyfelt, Marty R. ; Harboe-Sørensen, Reno ; Virtanen, Ari ; Kettunen, H. ; Dalton, Scott M. ; Dodd, Paul E. ; Jaksic, Aleksandar B.
Author_Institution :
Dept. of Phys., Univ. of Jyvaskyla, Jyvaskyla, Finland
Abstract :
The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.
Keywords :
MOSFET; X-ray effects; MOSFET transistors; SiO2; X-ray irradiation; heavy-ion induced electron-hole charge yield; silicon-oxide; Charge carrier processes; Degradation; Electrons; Java; Laboratories; MOSFETs; Physics; Protons; Voltage; X-rays; Charge yield; MOSFET; RADFET; heavy ion; silicon oxide;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033687
