• DocumentCode
    1342266
  • Title

    Heavy-Ion Induced Charge Yield in MOSFETs

  • Author

    Javanainen, Arto ; Schwank, James R. ; Shaneyfelt, Marty R. ; Harboe-Sørensen, Reno ; Virtanen, Ari ; Kettunen, H. ; Dalton, Scott M. ; Dodd, Paul E. ; Jaksic, Aleksandar B.

  • Author_Institution
    Dept. of Phys., Univ. of Jyvaskyla, Jyvaskyla, Finland
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3367
  • Lastpage
    3371
  • Abstract
    The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors irradiated with 10-keV X-rays and several different heavy ions. The obtained charge yield for the heavy ions is in average nearly an order of magnitude lower than for the X-rays for the entire range of measured electric fields.
  • Keywords
    MOSFET; X-ray effects; MOSFET transistors; SiO2; X-ray irradiation; heavy-ion induced electron-hole charge yield; silicon-oxide; Charge carrier processes; Degradation; Electrons; Java; Laboratories; MOSFETs; Physics; Protons; Voltage; X-rays; Charge yield; MOSFET; RADFET; heavy ion; silicon oxide;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2033687
  • Filename
    5341341
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342266