DocumentCode :
1342294
Title :
Theoretical Model for Dicke Superradiance in a Semiconductor Laser Device
Author :
Guo, Xuhan ; Williams, Kevin A. ; Olle, Vojtech ; Wonfor, Adrian ; Penty, Richard V. ; White, Ian H.
Author_Institution :
Eng. Dept., Univ. of Cambridge, Cambridge, UK
Volume :
23
Issue :
23
fYear :
2011
Firstpage :
1817
Lastpage :
1819
Abstract :
A theoretical model for Dicke superradiance (SR) in diode lasers is proposed using the travelling wave method with a spatially resolved absorber and spectrally resolved gain. The role of electrode configuration and optical bandwidth are compared and contrasted as a route to enhance femtosecond pulse power. While pulse duration can be significantly reduced through careful absorber length specification, stability is degraded. However an increased spectral gain bandwidth of up to 150 nm is predicted to allow pulsewidth reductions of down to 10 fs and over 500-W peak power without further degradation in pulse stability.
Keywords :
high-speed optical techniques; laser beams; laser stability; semiconductor lasers; superradiance; Dicke superradiance; absorber length specification; diode lasers; electrode configuration; femtosecond pulse power; optical bandwidth; pulse stability; pulsewidth reductions; semiconductor laser device; spatially resolved absorber; spectral gain bandwidth; spectrally resolved gain; travelling wave method; Bandwidth; Cavity resonators; Laser theory; Mathematical model; Semiconductor lasers; Spontaneous emission; Strontium; Semiconductor device modeling; short pulse generation; spontaneous emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2169661
Filename :
6035958
Link To Document :
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