• DocumentCode
    1342318
  • Title

    Parallelization of a Monte Carlo ion implantation simulator

  • Author

    Hössinger, Andreas ; Langer, Erasmus ; Selberherr, Siegfried

  • Author_Institution
    Inst. fur Mikroelektron., Tech. Univ. Wien, Austria
  • Volume
    19
  • Issue
    5
  • fYear
    2000
  • fDate
    5/1/2000 12:00:00 AM
  • Firstpage
    560
  • Lastpage
    567
  • Abstract
    We present a parallelization method based on message passing interface (MPI) for a Monte Carlo program for two-dimensional (2-D) and three-dimensional (3-D) simulation of ion implantations. We use a master-slave strategy where the master process synchronizes the slaves and performs the input-output operations, while the slaves perform the physical simulation. For this method the simulation domain is geometrically distributed among several CPU´s which have to exchange only very little information during the simulation. Thereby, the communication overhead between the CPU´s is kept so low that it has almost no influence on the performance gain even if a standard network of workstations is used instead of a massively parallel computer to perform the simulation. We have optimized the performance gain by identifying bottlenecks of this strategy when it is applied to arbitrary geometries consisting of various materials. This requires the application of different physical models within the simulation domain and makes it impossible to determine a reasonable domain distribution before starting the simulation. Due to a feedback between master and slaves by online performance measurements, we obtain an almost linear performance gain on a cluster of workstations with just slightly varying processor loads. Besides the increase in performance, the parallelization method also achieves a distribution of the required memory. This allows 3-D simulations on a cluster of workstations, where each single machines would not have enough memory to perform the simulation on its own
  • Keywords
    Monte Carlo methods; digital simulation; electronic engineering computing; ion implantation; message passing; parallel processing; semiconductor process modelling; workstation clusters; 2D simulation; 3D simulation; Monte Carlo program; Monte Carlo simulator; ion implantation simulator; master-slave strategy; message passing interface; parallelization method; workstation cluster; Communication standards; Computational modeling; Ion implantation; Master-slave; Message passing; Monte Carlo methods; Performance gain; Solid modeling; Two dimensional displays; Workstations;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.845080
  • Filename
    845080