DocumentCode
1342318
Title
Parallelization of a Monte Carlo ion implantation simulator
Author
Hössinger, Andreas ; Langer, Erasmus ; Selberherr, Siegfried
Author_Institution
Inst. fur Mikroelektron., Tech. Univ. Wien, Austria
Volume
19
Issue
5
fYear
2000
fDate
5/1/2000 12:00:00 AM
Firstpage
560
Lastpage
567
Abstract
We present a parallelization method based on message passing interface (MPI) for a Monte Carlo program for two-dimensional (2-D) and three-dimensional (3-D) simulation of ion implantations. We use a master-slave strategy where the master process synchronizes the slaves and performs the input-output operations, while the slaves perform the physical simulation. For this method the simulation domain is geometrically distributed among several CPU´s which have to exchange only very little information during the simulation. Thereby, the communication overhead between the CPU´s is kept so low that it has almost no influence on the performance gain even if a standard network of workstations is used instead of a massively parallel computer to perform the simulation. We have optimized the performance gain by identifying bottlenecks of this strategy when it is applied to arbitrary geometries consisting of various materials. This requires the application of different physical models within the simulation domain and makes it impossible to determine a reasonable domain distribution before starting the simulation. Due to a feedback between master and slaves by online performance measurements, we obtain an almost linear performance gain on a cluster of workstations with just slightly varying processor loads. Besides the increase in performance, the parallelization method also achieves a distribution of the required memory. This allows 3-D simulations on a cluster of workstations, where each single machines would not have enough memory to perform the simulation on its own
Keywords
Monte Carlo methods; digital simulation; electronic engineering computing; ion implantation; message passing; parallel processing; semiconductor process modelling; workstation clusters; 2D simulation; 3D simulation; Monte Carlo program; Monte Carlo simulator; ion implantation simulator; master-slave strategy; message passing interface; parallelization method; workstation cluster; Communication standards; Computational modeling; Ion implantation; Master-slave; Message passing; Monte Carlo methods; Performance gain; Solid modeling; Two dimensional displays; Workstations;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.845080
Filename
845080
Link To Document