Device-Physics-Based Analytical Model for Single-Event Transients in SOI CMOS Logic

Author

Kobayashi, Daisuke ; Hirose, Kazuyuki ; Ferlet-Cavrois, Véronique ; McMorrow, Dale ; Makino, Takahiro ; Ikeda, Hirokazu ; Arai, Yasuo ; Ohno, Morifumi

Author_Institution

Dept. of Spacecraft Eng., Japan Aerosp. Exploration Agency, Sagamihara, Japan

Volume

56

Issue

6

fYear

2009

Firstpage

3043

Lastpage

3049

Abstract

An analytical model is developed to calculate the single-event transient (SET) pulse widths in advanced silicon-on-insulator (SOI) CMOS logic. Waveform analysis reveals that the width of the pulses is large enough to exhibit rail-to-rail trapezoidal waveforms, which are a typical shape for SET pulses in SOI CMOS logic irradiated by ions hitting the center of MOS gates at normal incidence, consisting of two time components. Based on their physical mechanisms, they are modeled as functions of the irradiation and device parameters. The widths and their trends predicted by the model are in good agreement with numerical device simulations and pulsed-laser experimental results.

Keywords

CMOS logic circuits; semiconductor device models; silicon-on-insulator; device-physics-based analytical model; numerical device simulation; silicon-on-insulator CMOS logic; single-event transient pulse width; trapezoidal waveforms; waveform analysis; Analytical models; CMOS logic circuits; Logic devices; Predictive models; Pulse shaping methods; Semiconductor device modeling; Shape; Silicon on insulator technology; Space vector pulse width modulation; Transient analysis; CMOS devices; SOI technology; digital circuits; heavy ions; lasers; semiconductor device radiation effects; silicon-on-insulator (SOI); single- event effect (SEE); single-event modeling; single-event transient (SETs); soft errors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2034004

Filename

5341351