Title :
Radiation Effects in Type-Two Antimonide Superlattice Infrared Detectors
Author :
Weaver, B.D. ; Aifer, E.H.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
One-MeV proton irradiation of antimonide superlattice infrared detectors intended for use in space decreases the quantum efficiency, increases leakage and decreases the activation energy for carrier diffusion. Still, the devices show high radiation tolerance: The fluence at which noticable degradation is observed, 5 × 1011 H+/cm2, is equivalent to about 1 Mrad(Si).
Keywords :
aluminium compounds; carrier lifetime; gallium compounds; indium compounds; infrared detectors; leakage currents; proton effects; semiconductor superlattices; InAs-GaSb-AlSb; activation energy; carrier diffusion; proton irradiation; quantum efficiency; radiation effects; radiation tolerance; type-two antimonide superlattice infrared detectors; Atomic measurements; Degradation; Density measurement; HEMTs; Infrared detectors; MODFETs; Radiation effects; Satellites; Superlattices; Temperature; Antimonide-based superlattices; displacement damage; infrared detectors; space characterization;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033996
