High-power antiguided laser array fabricated without the need for overgrowth

Author

Gray, J.M. ; Marsh, J.H. ; Roberts, J.S.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

10

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

328

Lastpage

330

Abstract

The fabrication of conventional semiconductor antiguided laser array structures involves etching of the array profile followed by an overgrowth step. We report the fabrication of an antiguided laser array using zinc diffusion induced intermixing of a superlattice to create the necessary index step. The technique was used to fabricate a five-element, 10-μm center, antiguided laser array operating at 0.860 μm. The device operated at 1.2× diffraction limit to 3-W pulsed (total, both facets) and 1.6-W quasi-continuous-wave (CW) (100-μs pulses; total, both facets).

Keywords

III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; optical fabrication; quantum well lasers; refractive index; semiconductor laser arrays; semiconductor superlattices; 0.86 mum; 1.6 W; 100 mus; 3 W; GaAs-AlGaAs; GaAs-AlGaAs double QW laser; array profile; diffraction limit; five-element antiguided laser array; high-power antiguided laser array fabrication; index step; overgrowth step; pulsed lasing; quasi-CW lasing; semiconductor antiguided laser array structures; superlattice; zinc diffusion induced intermixing; Etching; Optical arrays; Optical device fabrication; Optical sensors; Optical superlattices; Optical surface waves; Optical waveguides; Phased arrays; Semiconductor laser arrays; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.661399

Filename

661399