Title :
A significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
Author :
Rao, E.V.K. ; Gottesman, Y. ; Allovon, M. ; Vergnol, E. ; Sigogne, D. ; Talneau, A. ; Sik, H. ; Slempkes, S. ; Theys, B. ; Chevallier, J.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
3/1/1998 12:00:00 AM
Abstract :
We show here that the high propagation losses often measured at /spl sim/1.56 μm in InGaAsP-InP buried-ridge stripe waveguides can be significantly brought down by implementing hydrogenation (exposure to deuterium plasma) as the last step to device termination. For example, losses as high as /spl sim/30 dB/cm measured in conventional as-processed structures have dropped down after hydrogenation to typically 4-5 dB/cm. This improved loss value is totally compatible for the realization of passive sections in photonic circuits. We further present preliminary data describing the good thermal stability of these propagation losses in post-hydrogenated structures.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated circuit technology; integrated optics; integrated optoelectronics; optical fabrication; optical losses; optical waveguides; 1.56 mum; InGaAsP-InP; InGaAsP-InP buried-ridge stripe waveguides; InGaAsP-InP buried-stripe waveguides; as-processed structures; deuterium plasma; good thermal stability; high propagation losses; hydrogenation; loss value; passive sections; photonic circuits; post-hydrogenated structures; propagation loss reduction; Deuterium; Epitaxial growth; Etching; Loss measurement; Optical losses; Optical waveguides; Plasma measurements; Plasma waves; Propagation losses; Switching systems;
Journal_Title :
Photonics Technology Letters, IEEE
