InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz

Author

Shimizu, N. ; Watanabe, N. ; Furuta, T. ; Ishibashi, T.

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

Volume

10

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

412

Lastpage

414

Abstract

Uni-traveling-carrier photodiodes (UTC-PD´s) with ultrafast response and high-saturation output are reported. It is experimentally demonstrated that the photoresponse of UTC-PD´s is improved by incorporating a step-like potential profile in the photoabsorption layer. The fabricated device shows a peak electrical 3-dB bandwidth of 152 GHz at a low reverse bias voltage of -1.5 V. The output voltage can be increased to as high as 1.9 V at higher reverse bias voltages with the 3-dB bandwidth staying at over three-quarters of the maximum value. To our knowledge, the obtained response is the fastest among those reported for 1.55-μm wavelength photodiodes.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical saturation; photodiodes; 1.5 V; 1.55 mum; 1.9 V; 150 GHz; InP-InGaAs; InP-InGaAs uni-traveling-carrier photodiode; high-saturation output; low reverse bias voltage; output voltage; photoabsorption layer; photoresponse; reverse bias voltages; step-like potential profile; ultrafast response; wavelength photodiodes; Bandwidth; Electrooptic devices; Indium phosphide; Low voltage; Optical fiber communication; Optical pulses; Photodiodes; Power lasers; Space charge; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.661427

Filename

661427