Title :
Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies
Author :
Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Ramachandran, Vishwanath ; Gouker, Pascale ; Dinkins, Cody A. ; Bhuva, Bharat L. ; Narasimham, Balaji ; Schrimpf, Ronald D. ; McCurdy, Michael W. ; Alles, Michael L. ; Reed, Robert A. ; Mendenhall, Marcus H. ; M
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
Keywords :
bipolar transistors; semiconductor device measurement; silicon-on-insulator; transient analysis; SET pulse-width measurements; SOI technology; diffusion; drift component; parasitic bipolar transistor parameters; silicon on insulator; single-event transient pulse widths; temperature dependence; CMOS technology; Circuit testing; Pulse circuits; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Silicon on insulator technology; Space vector pulse width modulation; Temperature dependence; Temperature distribution; Heavy ions; ion radiation effects; silicon-on-insulator technology; single event transients; single event upset (SEU);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034150
