Title :
Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers
Author :
Rieh, J.-S. ; Klotzkin, D. ; Qasaimeh, O. ; Lu, L.-H. ; Yang, K. ; Katehi, L.P.B. ; Bhattacharya, P. ; Croke, E.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
3/1/1998 12:00:00 AM
Abstract :
Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT´s with f/sub T/=23 GHz and f/sub max/=34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at /spl lambda/=850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB./spl Omega/ and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.
Keywords :
germanium compounds; integrated optoelectronics; optical fabrication; optical receivers; p-i-n photodiodes; silicon; silicon compounds; 1.6 GHz; 450 MHz; 850 nm; SiGe-Si; SiGe-Si HBT transimpedance amplifiers; SiGe-Si PIN-HBT front-end photoreceivers; monolithically integrated; photoreceivers; responsivity; transimpedance gain; transimpedance photoreceivers; Bandwidth; Costs; Diodes; Epitaxial growth; Fabrication; Gain; Heterojunction bipolar transistors; Integrated circuit technology; Molecular beam epitaxial growth; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
