Title :
Radiation Effects and Annealing Studies on Amorphous Silicon Solar Cells
Author :
Srour, J.R. ; Palko, J.W. ; Lo, D.H. ; Liu, S.H. ; Mueller, R.L. ; Nocerino, J.C.
Author_Institution :
Aerosp. Corp., Los Angeles, CA, USA
Abstract :
Results of radiation effects and annealing studies are presented for amorphous silicon solar cells from three manufacturers. Data scale well with ionizing dose in many cases for proton, x-ray, and electron irradiation. Significant long-term annealing occurs at room temperature. Results for small-area diodes are in reasonable agreement with findings for monolithic modules. Damage mechanisms in irradiated and illuminated devices are compared.
Keywords :
amorphous semiconductors; annealing; electron beam effects; elemental semiconductors; proton effects; silicon; solar cells; Si; X-ray irradiation; amorphous silicon solar cells; annealing; electron irradiation; monolithic modules; proton irradiation; radiation effects; temperature 293 K to 298 K; Amorphous silicon; Annealing; Degradation; Electrons; Laboratories; Manufacturing; Photovoltaic cells; Protons; Radiation effects; Temperature; Amorphous silicon; annealing; radiation effects; solar cells;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034329
