• DocumentCode
    1342760
  • Title

    A Bias-Dependent Single-Event Compact Model Implemented Into BSIM4 and a 90 nm CMOS Process Design Kit

  • Author

    Kauppila, Jeffrey S. ; Sternberg, Andrew L. ; Alles, Michael L. ; Francis, A. Matt ; Holmes, Jim ; Amusan, Oluwole A. ; Massengill, Lloyd W.

  • Author_Institution
    Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3152
  • Lastpage
    3157
  • Abstract
    A single-event model capable of capturing bias- dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process design kit. Simulation comparisons with mixed mode TCAD are presented.
  • Keywords
    CMOS integrated circuits; MOSFET; SPICE; BSIM4 transistor model; CMOS process design kit; MOSFETs; SPICE; bias-dependent single-event compact model; integrated circuit radiation effects; mixed mode TCAD; CMOS process; Circuit simulation; Circuit testing; Computational modeling; MOS devices; MOSFETs; Process design; Pulse circuits; SPICE; Semiconductor device modeling; Integrated circuit radiation effects; MOSFETs; SPICE; single-event effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2033798
  • Filename
    5341413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342760