Title :
Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs
Author :
DasGupta, Sandeepan ; McMorrow, Dale ; Reed, Robert A. ; Schrimpf, Ronald D. ; Boos, J. Brad ; Ramachandran, Vishwa
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
We investigate the dependence of the single-event response of AlSb/InAs HEMTs on details of the doping, layer thicknesses, and contamination levels. The transconductance depends on the Δ-doping and layer thickness, which are shown to have the maximum impact on charge collection when the device is biased near the pinch-off voltage. In the on condition (near zero gate bias), the effect is minimal. The possible role of carbon contamination near the substrate-buffer heterointerface in reducing some of the longer transients is discussed.
Keywords :
III-V semiconductors; aluminium compounds; contamination; high electron mobility transistors; indium compounds; semiconductor doping; AlSb-InAs; HEMT; carbon contamination effect; charge collection; contamination levels; doping layer thickness; high electron mobility transistor; pinch-off voltage; single-event response; substrate-buffer heterointerface; transconductance; Carbon; Contamination; HEMTs; MODFETs; Single event upset; Threshold voltage; Transient analysis; AlSb/InAs; TCAD; charge collection; high electron mobility transistors (HEMT); single event;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2075941
