Title :
Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike
Author :
Onoda, Shinobu ; Makino, Takahiro ; Iwamoto, Naoya ; Vizkelethy, Gyorgy ; Kojima, Kazutoshi ; Nozaki, Shinji ; Ohshima, Takeshi
Author_Institution :
Japan Atomic Energy Agency, Takasaki, Japan
Abstract :
The transient response of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with three different gates due to a single ion strike is studied. Comparing the experiment and numerical simulation, it is suggested that the charge enhancement is due to the bipolar effect. We find the bipolar gain depends on the quality of gate oxide. The impact of fixed charge in SiO2 and interface traps at SiC/SiO2 on the charge collection is discussed.
Keywords :
MOSFET; bipolar logic circuits; nuclear electronics; silicon compounds; SiO2-SiC; bipolar effect; charge collection; charge enhancement effect; interface traps; metal-oxide-semiconductor-field effect transistor; numerical simulation; silicon carbide; Ions; Logic gates; MOSFETs; Silicon carbide; Transient analysis; 6H-SiC; MOSFET; bipolar effect; single ion strike;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2070076
