DocumentCode :
1342832
Title :
Modeling of optical gain properties of multiple cations InGaAs-InAlAs quantum-well intermixing
Author :
Chan, Michael C Y ; Chan, Y. ; Li, E.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Volume :
34
Issue :
3
fYear :
1998
fDate :
3/1/1998 12:00:00 AM
Firstpage :
519
Lastpage :
525
Abstract :
Multiple cations intermixing in an In0.53Ga0.47 As-In0.52Al0.48As quantum-well (QW) structure with 60-Å well width is being studied based on the expanded form of Fick´s second law. Interdiffusion of the indium sublattice can result in a maximum compressive strain of 0.64% when annealing time reaches 3 h at 812°C. For a small interdiffusion, i.e., 1-1.5 h, the subband separation between the lowest heavy and light hole states is at its greatest. This has a major contribution to the modified band structure and averaged density of states which can result in an enhanced optical gain up to 40%. This initial stage of intermixing provides the best lasing performance. For large interdiffusion, i.e., up to 6 h, a large blue shift of the peak gain from 0.842 eV (λ=1.47 μm) to 1.016 eV (λ=1.22 μm) is obtained, thus giving a high tunability of the lasing wavelength
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; indium compounds; laser theory; positive ions; quantum well lasers; semiconductor device models; 0.842 eV; 1.016 eV; 1.22 mum; 1.47 mum; 3 h; 812 C; Fick´s second law; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As-In0.52Al0.48 As quantum-well structure; InGaAs-InAlAs quantum-well intermixing; annealing time; density of states; enhanced optical gain; high tunability; indium sublattice; intermixing provides; large blue shift; large interdiffusion; lasing performance; light hole states; maximum compressive strain; modified band structure; multiple cations; optical gain properties; small interdiffusion; well width; Capacitive sensors; Chirp modulation; Electrooptic modulators; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical materials; Quantum well devices; Quantum well lasers; Tunable circuits and devices;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.661461
Filename :
661461
Link To Document :
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