Title :
Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs
Author :
Busatto, Giovanni ; Currò, Giuseppe ; Iannuzzo, Francesco ; Porzio, Antonino ; Sanseverino, Annunziata ; Velardi, Francesco
Author_Institution :
D.A.E.I.M.I., Univ. of Cassino, Cassino, Italy
Abstract :
Starting from a physical model of the electric field that develops in the gate oxide during heavy-ion irradiation, we have experimentally and numerically investigated the single event gate damage observed in medium voltage power MOSFETs. Simulation results reveal that the total electric field reached during the heavy-ion impact is close to the one that is known to trigger the formation of latent damages during electro-static discharge (ESD) experiments.
Keywords :
power MOSFET; electric field; electro-static discharge; heavy-ion induced single event gate damage; latent damages; medium voltage power MOSFET; Charge carrier processes; Electrostatic discharge; Failure analysis; MOS capacitors; MOSFETs; Medium voltage; Operational amplifiers; Paper technology; Silicon; Temperature distribution; Latent gate damage; SEGR; power MOSFETs;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2032397
