DocumentCode :
1342985
Title :
Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors
Author :
Petterson, M.K. ; Hurley, R.F. ; Arya, K. ; Betancourt, C. ; Bruzzi, M. ; Colby, B. ; Gerling, M. ; Meyer, C. ; Pixley, J. ; Rice, T. ; Sadrozinski, H.F.-W. ; Scaringella, M. ; Bernardini, J. ; Borrello, L. ; Fiori, F. ; Messineo, A.
Author_Institution :
Santa Cruz Inst. for Particle Phys., Univ. of California-Santa Cruz, Santa Cruz, CA, USA
Volume :
56
Issue :
6
fYear :
2009
Firstpage :
3828
Lastpage :
3833
Abstract :
The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are derived.
Keywords :
neutron effects; nuclear electronics; position sensitive particle detectors; silicon radiation detectors; SuperLHC fluence; accelerated annealing; beta source; charge collection efficiency; detection efficiency; front-end electronics; neutron irradiated silicon detectors; p-type silicon strip sensors; voltage dependence; Annealing; Charge measurement; Current measurement; Detectors; Large Hadron Collider; Magnetic materials; Neutrons; Silicon; Strips; Voltage; Detectors; high-energy physics; radiation damage; silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2009.2033995
Filename :
5341447
Link To Document :
بازگشت