DocumentCode
1343004
Title
Avalanche noise in submicrometre pin diodes
Author
Herbert, D.C.
Author_Institution
DRA Electron. Sector, Malvern, UK
Volume
33
Issue
14
fYear
1997
fDate
7/3/1997 12:00:00 AM
Firstpage
1257
Lastpage
1258
Abstract
It is shown that recent measurements of noise suppression in thin GaAs pin diodes by Hu et al. (1996) can be explained as a dead space phenomenon and are consistent with the α/β ratio approaching unity at high electric fields
Keywords
III-V semiconductors; avalanche diodes; gallium arsenide; p-i-n diodes; semiconductor device noise; GaAs; avalanche noise; dead space; electron ionisation coefficient; hole ionisation coefficient; submicrometre pin diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970828
Filename
603606
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