Title :
Avalanche noise in submicrometre pin diodes
Author_Institution :
DRA Electron. Sector, Malvern, UK
fDate :
7/3/1997 12:00:00 AM
Abstract :
It is shown that recent measurements of noise suppression in thin GaAs pin diodes by Hu et al. (1996) can be explained as a dead space phenomenon and are consistent with the α/β ratio approaching unity at high electric fields
Keywords :
III-V semiconductors; avalanche diodes; gallium arsenide; p-i-n diodes; semiconductor device noise; GaAs; avalanche noise; dead space; electron ionisation coefficient; hole ionisation coefficient; submicrometre pin diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970828
