• DocumentCode
    1343077
  • Title

    Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator

  • Author

    Rao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N.

  • Author_Institution
    Centre for Optoelectron., Nat. Univ. of Singapore, Singapore
  • Volume
    33
  • Issue
    14
  • fYear
    1997
  • fDate
    7/3/1997 12:00:00 AM
  • Firstpage
    1258
  • Lastpage
    1260
  • Abstract
    Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. An LT-Al0.3Ga0.7As MISFET, having a gate length of 2 μm, exhibited a transconductance of 161 mS/mm, an IDSS of 320 mA/mm and a maximum drain voltage of 44.7 V, resulting in an I-V product of 1.65 W/mm; it displayed improved frequency dispersion characteristics over that of an LT GaAs MISFET
  • Keywords
    MISFET; Al0.3Ga0.7As; GaAs; GaAs MISFET device; low-temperature-grown Al0.3Ga0.7As gate insulator; molecular beam epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970805
  • Filename
    603607
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1343077