Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs

Author

Kalavagunta, Aditya ; Silvestri, M. ; Beck, M.J. ; Dixit, S.K. ; Schrimpf, Ronald D. ; Reed, R.A. ; Fleetwood, D.M. ; Shen, L. ; Mishra, U.K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3192

Lastpage

3195

Abstract

The relationship between proton-induced defects and gate-lag in GaN high-electron mobility transistors (HEMTs) is examined using simulations and experiments. Surface traps are primarily responsible for the pre-irradiation gate-lag. Experimental data and detailed two-dimensional device simulations demonstrate that bulk traps increase the amount of observed gate-lag after irradiation to high-proton fluences.

Keywords

III-V semiconductors; high electron mobility transistors; proton effects; semiconductor device models; wide band gap semiconductors; 2D device simulation; AlGaN-AlN-GaN; HEMT; high-electron mobility transistor; preirradiation gate-lag; proton irradiation-induced bulk defect; surface traps; Aluminum gallium nitride; Degradation; Electron traps; Gallium nitride; HEMTs; MODFETs; Protons; Pulse measurements; Radio frequency; Voltage; Deep-level traps; GaN; displacement damage; high electron mobility transistor (HEMT); polarization charge; proton radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2034156

Filename

5341504